| PART |
Description |
Maker |
| BFU760F BFU760F-15 |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|
| BFU730F BFU730F-15 |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|
| BGU7003 |
Wideband silicon germanium low-noise amplifier MMIC
|
NXP Semiconductors
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| BFP62010 |
NPN Silicon Germanium RF Transistor
C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
Infineon Technologies A...
|
| BFR720L3RH |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| SGA-7489 |
DC-3000 MHZ SILICON GERMANIUM
|
Electronic Theatre Controls, Inc.
ETC
Stanford Microdevices
|
| NESG3032M14-T3-A NESG3032M14-A |
NPN SILICON GERMANIUM RF TRANSISTOR
|
California Eastern Laboratories
|
| BFP740F |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| NESG7030M04-T2B-A NESG7030M04-T2-A NESG7030M04-A |
NPN Silicon Germanium Carbon RF Transistor
|
Renesas Electronics Corporation
|
